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| BSM 100 GB 170 DN2 IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate * RG on,min = 15 Ohm Type BSM 100 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C67070-A2703-A67 1700V 145A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 145 100 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 290 200 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 1000 W + 150 -55 ... + 150 0.13 0.4 4000 20 11 F 55 / 150 / 56 Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Aug-01-1996 BSM 100 GB 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.8 5.5 3.4 4.5 0.8 3.2 6.2 3.9 5.3 V VGE = VCE, IC = 8 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 100 A, Tj = 25 C VGE = 15 V, IC = 100 A, Tj = 125 C Zero gate voltage collector current ICES 1 - mA VCE = 1700 V, VGE = 0 V, Tj = 25 C VCE = 1700 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 320 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 36 16 1.3 0.5 - S nF - VCE = 20 V, IC = 100 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Aug-01-1996 BSM 100 GB 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 450 900 ns VCC = 1200 V, VGE = 15 V, IC = 100 A RGon = 15 Rise time tr 200 400 VCC = 1200 V, VGE = 15 V, IC = 100 A RGon = 15 Turn-off delay time td(off) 850 1200 VCC = 1200 V, VGE = -15 V, IC = 100 A RGoff = 15 Fall time tf 110 160 VCC = 1200 V, VGE = -15 V, IC = 100 A RGoff = 15 Free-Wheel Diode Diode forward voltage VF 2.3 2.1 2.8 - V IF = 100 A, VGE = 0 V, Tj = 25 C IF = 100 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr 0.5 - s IF = 100 A, VR = -1200 V, VGE = 0 V diF/dt = -1000 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 100 A, VR = -1200 V, VGE = 0 V diF/dt = -1000 A/s Tj = 25 C Tj = 125 C 8 25 - Semiconductor Group 3 Aug-01-1996 BSM 100 GB 170 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C 1100 W Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 tp = 1.8s A Ptot 900 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 160 IC 10 2 10 s 100 s 10 1 1 ms 10 ms 10 0 DC 10 -1 0 10 10 1 10 2 10 3 V TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 170 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT K/W IC 140 ZthJC 10 -1 120 100 80 -2 D = 0.50 0.20 60 10 0.10 0.05 40 0.02 0.01 20 single pulse 0 0 20 40 60 80 100 120 C 160 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Semiconductor Group 4 Aug-01-1996 BSM 100 GB 170 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 200 A IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 200 A 17V 15V 13V 11V 9V 7V IC 160 140 120 100 80 60 40 20 0 0.0 IC 160 140 120 100 80 60 40 20 0 0.0 17V 15V 13V 11V 9V 7V 1.0 2.0 3.0 4.0 V 6.0 1.0 2.0 3.0 4.0 V 6.0 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 400 A IC 300 250 200 150 100 50 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Aug-01-1996 BSM 100 GB 170 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 100 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 nF VGE 16 14 12 10 8 C Ciss 10 1 800 V 1200 V 10 0 6 4 2 0 0.0 10 -1 0 Coss Crss 0.2 0.4 0.6 0.8 1.0 1.2 1.4 C 1.7 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 25 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 250 500 750 1000 1250 1500 V 2000 VCE 0 0 250 500 750 1000 1250 1500 V 2000 VCE Semiconductor Group 6 Aug-01-1996 BSM 100 GB 170 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 15 10 4 t = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, IC = 100 A 10 4 ns t 10 3 t ns tdoff tdoff tdon tr 10 3 tdon tr 10 2 tf 10 2 tf 10 1 0 50 100 150 A 250 10 1 0 20 40 60 80 IC 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 15 200 mWs E 160 140 120 100 80 60 Eoff 40 20 0 0 Eon E = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, IC = 100 A 200 mWs E 160 140 120 Eon 100 80 60 40 Eoff 20 0 0 50 100 150 A 250 20 40 60 80 IC 120 RG Semiconductor Group 7 Aug-01-1996 BSM 100 GB 170 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 200 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 Diode Tj=125C K/W IF 160 140 120 100 80 60 40 20 0 0.0 Tj=25C ZthJC 10 -1 10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01 0.5 1.0 1.5 2.0 2.5 V VF 3.5 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Semiconductor Group 8 Aug-01-1996 BSM 100 GB 170 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 9 Aug-01-1996 |
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